Transistor device apparatus employing free-space electron emissi

Details Transistor device apparatus employing free-space electron emissi Transistor device apparatus employing free-space electron emissi

1992-05-04

1993-10-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257213, 257565, 257 10, 313499, 313309, 313346R, H01L 2972, H01L 2702

Patent

active

052568881

ABSTRACT:
An electron device (100, 110, 200, 300, 400, 500) comprised of a semiconductor transistor such as a bipolar or field effect transistor, a diamond material layer (107, 206, 305), and a distally disposed anode is provided.

REFERENCES:
patent: 5075595 (1991-12-01), Kane
patent: 5079476 (1992-01-01), Kane
patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5180951 (1993-01-01), Dworsky et al.
patent: 5202571 (1993-04-01), Hirabayashi et al.

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