Transistor comprising a 2-dimensional carrier gas collector situ

Details Transistor comprising a 2-dimensional carrier gas collector situ Transistor comprising a 2-dimensional carrier gas collector situ

1987-10-21

1989-08-22

Larkins, William D.

357 4, 357 16, H01L 2976

Patent

active

048600644

ABSTRACT:
A previously ignored property of a degenerate 2-dimensional gas of charge carriers in a quantum well (to be termed the quantum-capacitance effect) makes possible a novel class of transistors. In these devices the collector (a quantum well having high transverse conductance) is located between gate and emitter, with a barrier layer between emitter and collector, and a relatively thin barrier layer between collector and gate, and the chemical compositions and/or thicknesses of the various layers are chosen such that application of a voltage to the gate results, as a manifestation of the quantum-capacitance effect, in an induced charge in the emitter, whereby a current between emitter and collector can be controlled by means of a voltage applied to the gate. Transistors according to the invention potentially are very fast. Exemplarily the invention is embodied in a GaAs/AlGaAs heterostructure.

REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 4721983 (1988-01-01), Frazier
Review of Modern Physics, vol. 54, No. 2, Apr. 1982 "Electronic Properties of Two-Dimensional Systems" by T. Ando et al., pp. 437-458.
Applied Physics Letters, vol. 47(8), "Inverted Base-Collector Tunnel Transistors" by A. R. Bonnefoi et al., pp. 888-890 (1985).
MOS Physics and Technology, John Wiley & Sons, New York (1982) pp. 254-271.

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