Transistor circuit including source voltage ripple removal

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307255, 330 30D, 330 40, H03K 1700

Patent

active

040177491

ABSTRACT:
In a transistor circuit comprising a monolithic semiconductor integrated circuit including at least one first conductivity type transistor having a base connected to a signal input terminal, a collector connected to an output terminal and also connected to a source voltage supply terminal through a collector load resistance, and an emitter connected to a reference potential through an emitter resistance, and a voltage dividing resistance circuit connected externally to the integrated circuit to establish a base-emitter biasing voltage of the first conductivity type transistor, another resistance element is provided between the source voltage supply terminal and the load resistance and a second conductivity type transistor is provided with the emitter and the collector connected to the interconnection point of the two resistances and the reference potential, respectively, and the base connected to the emitter of the first conductivity type transistor, integrating a source voltage ripple removing circuit in the integrated circuit. This transistor circuit is adapted for a high output power integrated circuit and provides a wide range of operable source voltage as well as the removal of the ac ripple voltage component of the voltage source and the reduction in the number of external connecting pins.

REFERENCES:
patent: 3843935 (1974-10-01), Seki

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