1975-04-17
1977-06-28
Wojciechowicz, Edward J.
357 23, 357 34, 357 39, 357 40, 357 88, 357 89, 357 90, H01L 2900, H01L 2972, H01L 29747, H01L 2702
Patent
active
040329569
ABSTRACT:
A transistor circuit is disclosed in which a region with opposite conductivity type to that of an emitter region or a MOS type structure is disposed adjacent to the emitter region within the diffusion length from an emitter-base junction. A gain control circuit is constructed by varying the emitter-grounded current amplification factor h.sub.FE of a transistor.
REFERENCES:
patent: 2822310 (1958-02-01), Stieltjes et al.
patent: 3204160 (1965-08-01), Sah
patent: 3641404 (1972-02-01), Per
patent: 3699406 (1972-10-01), Mapother et al.
Tsuyuki Tadaharu
Yagi Hajime
Sony Corporation
Wojciechowicz Edward J.
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