Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Reexamination Certificate
2005-05-11
2009-11-24
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
C257S592000, C257S557000, C257S563000, C257SE29184
Reexamination Certificate
active
07622790
ABSTRACT:
A transistor assembly having a transistor includes a plurality of transistor regions, each of which has a vertical transistor structure having a collector semiconductor region, a base semiconductor region and an emitter semiconductor region, emitter contacting regions arranged above the transistor regions and base contacting regions connected to the base semiconductor regions via a polycrystalline semiconductor layer, wherein the polycrystalline semiconductor layer is structured such that the base contacting regions of transistor regions which are not part of the transistor are electrically isolated from base contacting regions of transistor regions which are part of the transistor.
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Ho Tu-Tu V
Infineon - Technologies AG
Maginot Moore & Beck
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