Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-09-21
2009-08-11
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S208000, C257SE33055
Reexamination Certificate
active
07573068
ABSTRACT:
A transistor array substrate includes a plurality of driving transistors which are arrayed in a matrix on a substrate. The driving transistor has a gate, a source, a drain, and a gate insulating film inserted between the gate, and the source and drain. A plurality of signal lines are patterned together with the gates of the driving transistors and arrayed to run in a predetermined direction on the substrate. A plurality of supply lines are patterned together with the sources and drains of the driving transistors and arrayed to cross the signal lines via the gate insulating film. The supply line is electrically connected to one of the source and the drain of the driving transistor. A plurality of feed interconnections are formed on the supply lines along the supply lines, respectively.
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A Japanese Office Action (and English translation thereof) dated Apr. 30, 2008, issued in a counterpart Japanese Application.
Kumagai Minoru
Ogura Jun
Shimoda Satoru
Shirasaki Tomoyuki
Casio Computer Co. Ltd.
Frishauf Holtz Goodman & Chick P.C.
Monbleau Davienne
Mulcare Shweta
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