Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-04-26
2005-04-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S058000, C257S060000, C257S061000, C257S072000, C257S070000, C257S074000, C257S063000, C438S149000, C438S150000, C438S151000
Reexamination Certificate
active
06885028
ABSTRACT:
A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.
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Kobayashi Kazuki
Nishiki Hirohiko
Erdem Fazli
Flynn Nathan J.
Keating & Bennett LLP
Sharp Kabushiki Kaisha
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