Transistor antifuse for a programmable ROM

Details Transistor antifuse for a programmable ROM Transistor antifuse for a programmable ROM

1992-08-21

1994-01-25

LaRoche, Eugene R.

Static information storage and retrieval

Read only systems

Fusible

365149, 257529, 257530, H01L 2702, G11C 1134

Patent

active

052821587

ABSTRACT:
A programmable read-only memory device and method of fabrication are disclosed having an antifuse in the drain node of a field effect transistor. Programming is accomplished by imposing a high voltage on the transistor drain and gate which causes the antifuse to be a closed circuit; otherwise, the transistor appears as an open circuit. Locating the antifuse in the drain node as opposed to the source node avoids problems of source reverse bias.

REFERENCES:
patent: 4569120 (1986-02-01), Stacey et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4855247 (1989-08-01), Ma et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5100827 (1992-03-01), Lytle
patent: 5119163 (1992-06-01), Ishihara et al.

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