Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2006-06-20
2006-06-20
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S613000, C257S614000, C257S192000, C257S197000, C257SE29094, C257SE29099
Reexamination Certificate
active
07064346
ABSTRACT:
In an npn-type transistor, the emitter42and the collector43are formed of an n-type transparent semiconductor, and the base41is formed by a p-type transparent semiconductor. The base electrode44, the emitter electrode45and the collector electrode46are formed respectively on the base41, the emitter42and the collector43. As the n-type transparent semiconductor, for example, n-type ZnO is used. The n-type ZnO is ZnO doped with, for example, group III elements, group VII elements. As the p-type transparent semiconductor, for example, p-type ZnO is used. The p-type ZnO is ZnO doped with, for example, group I elements and group V elements.
REFERENCES:
patent: 4233573 (1980-11-01), Grudkowski
patent: 4582395 (1986-04-01), Morozumi
patent: 5532062 (1996-07-01), Miyazaki et al.
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 6410162 (2002-06-01), White et al.
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 56-125868 (1981-10-01), None
patent: 57-132191 (1982-08-01), None
patent: 63-121886 (1988-05-01), None
patent: 01-065868 (1989-03-01), None
patent: 07-114351 (1995-05-01), None
patent: 9-199732 (1997-07-01), None
A.Onodera, et al., “Ferroelctric Properties in Piezoelectric Semiconductor Zn1 -xMxO (M=Li, Mg)”, Jpn. J. Appl. Phys., vol. 36, Part 1, No. 9B, pp. 6008-6011, Sep. 1997.
A.Onodera, et al., “Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-DoppedZnO”, Jpn. J. Appl. Phys., vol. 35, Part 1, No. 9B, pp. 65160-65162, Sep. 1996.
Boesen, et al., “ZnO Field-Effect Transistor”, Proceedings of the IEEE, pp. 2094-2095, Nov. 1968.
Kawasaki Masashi
Ohno Hideo
Díz José R.
Niefeld IP Law, PC
Parker Kenneth
LandOfFree
Transistor and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor and semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3636615