Transistor and semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S613000, C257S614000, C257S192000, C257S197000, C257SE29094, C257SE29099

Reexamination Certificate

active

07064346

ABSTRACT:
In an npn-type transistor, the emitter42and the collector43are formed of an n-type transparent semiconductor, and the base41is formed by a p-type transparent semiconductor. The base electrode44, the emitter electrode45and the collector electrode46are formed respectively on the base41, the emitter42and the collector43. As the n-type transparent semiconductor, for example, n-type ZnO is used. The n-type ZnO is ZnO doped with, for example, group III elements, group VII elements. As the p-type transparent semiconductor, for example, p-type ZnO is used. The p-type ZnO is ZnO doped with, for example, group I elements and group V elements.

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A.Onodera, et al., “Ferroelctric Properties in Piezoelectric Semiconductor Zn1 -xMxO (M=Li, Mg)”, Jpn. J. Appl. Phys., vol. 36, Part 1, No. 9B, pp. 6008-6011, Sep. 1997.
A.Onodera, et al., “Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-DoppedZnO”, Jpn. J. Appl. Phys., vol. 35, Part 1, No. 9B, pp. 65160-65162, Sep. 1996.
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