Transistor and power amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor

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Details

330307, 257287, H03F 316

Patent

active

060023015

ABSTRACT:
A transistor includes: a source region; at least two drain regions; channels respectively disposed between the source region and each of the at least two drain regions; and a gate electrode provided on each of the channels. The at least two drain regions are electrically isolated from one another; and a drain electrode is provided on each of the drain regions.

REFERENCES:
patent: 3489963 (1970-01-01), Gillet
patent: 4080577 (1978-03-01), Asada et al.
patent: 4084173 (1978-04-01), Fantechi
patent: 4219838 (1980-08-01), Lardy et al.
patent: 4313126 (1982-01-01), Krumm et al.
patent: 4631492 (1986-12-01), Magarshack et al.
patent: 5006816 (1991-04-01), Koide
patent: 5016079 (1991-05-01), Plagens
patent: 5331192 (1994-07-01), Kudoh

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