Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-09-19
2000-07-25
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257347, 257618, H01L 2976, H01L 2922
Patent
active
060939354
ABSTRACT:
In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.
REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4956691 (1990-09-01), Culley et al.
patent: 4997777 (1991-03-01), Boivin
patent: 5041885 (1991-08-01), Gualandris et al.
patent: 5124272 (1992-06-01), Saito et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5523605 (1996-06-01), Yamazaki et al.
patent: 5726487 (1998-03-01), Sameshima et al.
patent: 5780345 (1998-07-01), Yamazaki et al.
"Device Electronics for Integrated Circuits" Second Edition, Richard S. Muller, John Wiley & Sons, 1986, pp. 454-456.
Ferguson Jr. Gerald J.
Monin, Jr. Donald L.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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