Transistor and method for fabricating the same

Details Transistor and method for fabricating the same Transistor and method for fabricating the same

1993-12-02

1995-03-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 46, 437909, 437160, 257344, H01L 21265

Patent

active

054016789

ABSTRACT:
An LDD transistor, preventive of the weakening of source/drain junction breakdown voltage and the increase of junction leakage current, and a method for the fabrication of the same. The LDD transistor is comprised of: a field oxide film formed on a predetermined portion of a semiconductor having a low density ion-implanted region therein, the field oxide film having a damaged portion; a gate electrode formed over the field oxide film; an insulating film formed over the gate electrode; a gate polyoxide film resulting from the oxidation of the side wall of the gate electrode; a spacer insulating film formed at the side wall provided by the gate polyoxide film and the insulating film atop the gate polyoxide film; a pad polysilicon film deposited over the insulating film, spacer oxide film, the low density ion-implanted region and the field oxide film; and a high density ion-implanted region formed below the pad polysilicon film, being confined within the low density ion-implanted region.

REFERENCES:
patent: 5026657 (1991-06-01), Lee et al.
patent: 5073510 (1991-12-01), Kwon et al.
patent: 5082796 (1992-01-01), Ei-Diwany et al.
patent: 5196357 (1993-03-01), Boardman et al.

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