Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2006-05-26
2009-06-23
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C257S059000, C257S072000, C257SE21413, C438S587000
Reexamination Certificate
active
07550308
ABSTRACT:
A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween; a source electrode; a drain electrode opposing the source electrode with the channel therebetween; a second insulating film covering the gate electrode; and a semiconductor layer having a width larger than a width of the gate electrode in the channel width direction and being partly provided on the gate electrode with the second insulating film interposed therebetween so that the gate electrode, the second insulating film, and the semiconductor layer are laminated in the channel.
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Izumi Nozomu
Mori Hideo
Ukigaya Nobutaka
Yoshinaga Hideki
Canan Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Ingham John C
Weiss Howard
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