Transistor

Details Transistor Transistor

1987-09-04

1989-04-25

James, Andrew J.

357 34, 357 89, 357 56, H01L 2972, H01L 29205

Patent

active

048252654

ABSTRACT:
A transistor is described which the base region comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprises a submonolayer of Be atoms. The effective base transit time is negligible in these transistors.

REFERENCES:
patent: 3780359 (1973-12-01), Dumke et al.
patent: 4410902 (1983-10-01), Malik
patent: 4691215 (1987-09-01), Luryi
Asbeck et al., "Digital GaAs Circuits" ISSCC 22 Feb. 1984 IEEE Int. Sol. State. Cir. Conf. pp. 50-51.
Chang et al., "MBE . . . Barrier Transistor" IEEE Elect. Dev. Letters vol. EDL-6 No. 3 Mar. 1985 pp. 123-125.
IEEE Trans. Electron Dev., vol. ED-32, p. 2345, 1985, G. W. Taylor et al.
IEEE Electron Dev. Lett., vol. ED-33, p. 1845, 1986, K. Matsumoto et al.

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