Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – Reverse bias tunneling structure
Reexamination Certificate
2008-04-22
2008-04-22
Ngo, Ngan V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
Reverse bias tunneling structure
C257S603000, C257S605000, C257S606000, C257SE29335, C257SE21357
Reexamination Certificate
active
11008416
ABSTRACT:
A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode (105) in series with a second rectifier diode (106) also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (301). The die has a low resistivity buried diffused layer (303) having a first conductivity type disposed between a semiconductor substrate (301) having the opposite conductivity type and a high resistivity epitaxial layer (305) having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip (202) that has four solder bump pads (211-214). The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. §1.72(b).
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Cartmell Donald K.
Matteson Fred
Pai Venkatesh Panemangalore
Cahill von Hellens & Glazer, P.L.C.
Ngo Ngan V.
Protek Devices, LP
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