Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2011-07-19
2011-07-19
Turocy, David (Department: 1715)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255310, C427S255320, C427S255700, C427S248100
Reexamination Certificate
active
07981473
ABSTRACT:
A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.
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Kim Gi Youl
Londergan Ana R.
Ramanathan Sasangan
Seidel Thomas E.
Srivastava Anuranjan
Aixtron Inc.
SNR Denton US LLP
Turocy David
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