Transient capless annealing process for the activation of ion im

Details Transient capless annealing process for the activation of ion im Transient capless annealing process for the activation of ion im

1983-05-27

1985-10-01

Saba, William G.

Metal treatment

Compositions

Heat treating

29575, 29576B, 29576T, 148175, 148DIG3, 148DIG22, 148DIG24, H01L 21265, H01L 21324

Patent

active

045444170

ABSTRACT:
A method and apparatus is described for activating implants in gallium arsenide incorporating crushed gallium arsenide and hydrogen to form a gas mixture to provide an atmosphere for the gallium arsenide to be activated and a furnace for heating the crushed gallium arsenide to a first temperature and the gallium arsenide to be activated to a second temperature. The invention overcomes the problem of wafer loss at the surface by evaporation during anneal and activation of gallium arsenide.

REFERENCES:
patent: 3974002 (1976-08-01), Casey et al.
patent: 3984263 (1976-10-01), Asao et al.
patent: 4135952 (1979-01-01), Anderson et al.
patent: 4174982 (1979-11-01), Immorlica
patent: 4312681 (1982-01-01), Rupprecht et al.
Lee et al., "Characteristics of Implanted . . . Annealed . . . Atmosphere", Ion Implantation in Semiconductors 1976 (Text), Plenum Press, N.Y., 1976.
Malbon et al., "Annealing of Ion-Implanted GaAs in a Controlled Atmosphere", J. Electrochem. Soc., vol. 123, No. 9, Sep. 1976, pp. 1413-1415.
Molnar et al. "Capless Annealing of Ion Implanted InP and GaAs . . . ", Text-Gallium Arsenide and Related Compound, 1980, Inst. of Physics, London.
Woodall et al., "Proximate Capless Annealing . . . As Vapor . . . " Appl. Phys. Lett., vol 38, No. 8, Apr. 15, 1981, pp. 639-641.

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