Transient array drive for bipolar ROM/PROM

Details Transient array drive for bipolar ROM/PROM Transient array drive for bipolar ROM/PROM

1978-05-22

1980-12-30

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 307254, 307300, 365102, H03K 301, H03K 326, H03K 1756

Patent

active

042426057

ABSTRACT:
A radiation hardened circuit for a bit line driver in a ROM or PROM wherein the discharge of the bit line capacitance is enhanced by shorting the current limiting resistor momentarily at the initiation of the discharge cycle and by allowing the bit line charging voltage to go to a value only slightly less than the power supply voltage without sacrificing speed and noise immunity. The result is decreased delay time during the discharge transition without loss in noise immunity.

REFERENCES:
patent: 3091705 (1963-05-01), Levine
patent: 3879137 (1975-04-01), Sakazaki et al.
patent: 3959782 (1976-05-01), Dunn
patent: 4131808 (1978-12-01), Kuo

Affiliated with

Also associated with

Rating

Transient array drive for bipolar ROM/PROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transient array drive for bipolar ROM/PROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transient array drive for bipolar ROM/PROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-9334