Transformer coupled gate drive circuit for power MOSFETS

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307571, 307577, H03K 17687, H03K 1704

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active

050197193

ABSTRACT:
A driving circuit, for switching devices such as power MOSFETs, Insulated Gate Bipolar Transistors and the like, includes a transformer with a primary winding which receives input control signals having positive and negative portions. The driving circuit responds to the control pulses from the secondary winding of the transformer to charge a storage capacitor during the positive portions of the control signals. A pair of low power switching devices, i.e., MOSFETS, are turned on mutually exclusively by the control signals. A first one of the low power MOSFETs is turned on during the positive portion of the control signals to clamp the gate voltage of and keep the power MOSFET turned off and at the same time to enable electrical charge to flow from the control pulse to the storage capacitor. During the subsequent negative portion, the first transistor is turned off and the second transistor is turned on to allow electrical charge to flow from the storage capacitor to the gate of the power MOSFET.

REFERENCES:
patent: 3657568 (1972-04-01), Dargent
patent: 3889135 (1975-06-01), Nomiya et al.
patent: 3999086 (1976-12-01), Ekelund
patent: 4360744 (1982-11-01), Taylor
patent: 4423341 (1983-12-01), Shelly
patent: 4461966 (1984-07-01), Hebenstreit
patent: 4937470 (1990-06-01), Zeiler

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