Transferring semiconductor crystal from a substrate to a resin

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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Details

C438S033000, C438S106000, C257SE33066

Reexamination Certificate

active

11100203

ABSTRACT:
A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

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patent: 2003/0162463 (2003-08-01), Hayashi et al.

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