Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Intervalley transfer
Patent
1995-07-13
1997-10-07
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Intervalley transfer
257 11, 257 26, 257495, 257625, H01L 2726, H01L 4700
Patent
active
056751575
ABSTRACT:
A semiconductor body (2) has an active region (6) of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum and an injector region (9) defining a potential barrier (P) to the flow of electrons into the active region (6) of a height such that, in operation of the device, electrons with sufficient energy to surmount the barrier (P) provided by the injector region (9) are emitted into the active region (6) with an energy comparable to that of the at least one relatively high mass, low mobility conduction band satellite minimum. An electron containing well region (10a, 10b) of a material different from that of the active region (6) and of the injector region (9) is provided between the injector region (9) and the active region (6) for inhibiting the spread of a depletion region into the active region (6) during operation of the device.
REFERENCES:
patent: 3673469 (1972-06-01), Colliver et al.
patent: 3753804 (1973-08-01), Tijburg et al.
patent: 3755752 (1973-08-01), Kim
patent: 4238763 (1980-12-01), Gray et al.
patent: 4649405 (1987-03-01), Eastman
patent: 5250815 (1993-10-01), Battersby et al.
patent: 5258624 (1993-11-01), Battersby et al.
Biren Steven R.
Monin Donald
U.S. Philips Corporation
LandOfFree
Transferred electron effect device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transferred electron effect device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transferred electron effect device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2359583