Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1992-06-16
1993-11-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257905, 257 26, 2571831, H01L 2726, H01L 4700
Patent
active
052586243
ABSTRACT:
A transferred electron effect device has a semiconductor body with an active region (2) of n conductivity type formed of a semiconductor material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum, and an injection zone (3) adjoining the active region (2) for causing electrons to be emitted, under the influence of an applied electric field, from the injection zone (3) into the active region (2) with an energy comparable to that of the relatively high mass, low mobility, conduction band satellite minima of the active region. The injection zone (3) is formed by first and second n conductivity type regions (4 and 5) separated by a barrier region (6) which has an impurity concentration characteristic of the p conductivity type and which is sufficiently thin as to be fully depleted of free charge carriers under zero bias, at least one of the first and second regions (4) being highly doped relative to the active region at least adjacent the barrier region and the barrier region (6) having an impurity concentration sufficient to provide a potential barrier (P) to the flow of electrons of a height such that in operation of the device, electrons with sufficient energy to surmount the potential barrier (P) provided by the barrier region (6) are emitted into the active region (2) with an energy comparable to that of a conduction band satellite minimum of the active region (2).
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Battersby Stephen J.
Shannon John M.
Szubert Marek
Biren Steven R.
Mintel William
Saadat Mahshid
U.S. Philips Corp.
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