Transferred electron device with periodic ballistic regions

Details Transferred electron device with periodic ballistic regions Transferred electron device with periodic ballistic regions

1987-07-09

1989-11-07

LaRoche, Eugene R.

357 4, H01L 2726, H01L 2712, H01L 4702

Patent

active

048795810

ABSTRACT:
The invention provides a new transferred electron device, including a substrate, a metal layer forming the cathode contact, an N doped semiconductor input layer and a periodic structure formed of elementary cells; each cell includes a short ballistic doped region defined on each side by a very thin layer, respectively P+ and N+, and followed by a transit region of an homogeneous N doped material. In the short ballistic regions, the electrons acquire the energy necessary for the transfer from the band .GAMMA. to the band L in a time less than the collision time, then the transit regions allow the thermalization of the electrons which arrive at the following ballistic region with a mean energy still equal. A metal contact anode is provided on this last transit region.

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