Transfer molded semiconductor device package with integral shiel

Details Transfer molded semiconductor device package with integral shiel Transfer molded semiconductor device package with integral shiel

1991-02-22

1992-11-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

361424, 174 35R, H01L 2328

Patent

active

051667720

ABSTRACT:
A shielded semiconductor package and a method for manufacturing the package is provided. The shielded semiconductor package comprises a substrate (10) having a metallization pattern (12, 13), with one portion of the metallization pattern being a circuit ground (13). A semiconductor device (16) is electrically interconnected (17) to the metallization pattern (12). A perforated metal shield or screen (18) covers the semiconductor device (16) and is electrically and mechanically attached to the metallization circuit ground (13) in order to shield the semiconductor device (16) from radio frequency energy. A resin material (14) is transfer molded about the semiconductor device, the electrical interconnections, and the metal screen to form the completed package.

REFERENCES:
patent: 4177480 (1979-12-01), Hintzmann et al.
patent: 4661837 (1987-04-01), Sono
patent: 4675985 (1987-06-01), Goto
patent: 4680617 (1987-07-01), Ross
patent: 4967315 (1990-10-01), Schelhorn

Affiliated with

Also associated with

Rating

Transfer molded semiconductor device package with integral shiel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transfer molded semiconductor device package with integral shiel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transfer molded semiconductor device package with integral shiel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-925940