Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S030000, C438S149000, C438S421000, C438S455000, C438S459000, C438S460000, C438S462000, C438S690000, C257S084000, C257S088000, C257S258000, C257S288000, C257SE21211, C257SE21409, C257SE21482, C257SE33001
Reexamination Certificate
active
07943488
ABSTRACT:
A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer.
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Canon Kabushiki Kaisha
Canon U.S.A. Inc. IP Division
Nguyen Dao H
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