Transfer gate with the improved cut-off characteristic

Details Transfer gate with the improved cut-off characteristic Transfer gate with the improved cut-off characteristic

1989-12-07

1991-06-11

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 45, 307279, 307443, 307572, H01L 2702, H03K 326, H03K 1716, H03K 17687

Patent

active

050236881

ABSTRACT:
A transfer gate is made up of at least two p-channel MOS FETs and at least two n-channel MOS FETs. The current paths of the n-channel MOS FETs are connected in series, and the conduction of the FETs is controlled by a first control signal applied to the gates thereof. The current paths of the p-channel MOS FETs are also connected in series, and the conduction of the FETs is controlled by a second control signal applied to the gates thereof. The first and second control signals are opposite phase. The series circuit of the current paths of the p-channel FETs is connected in parallel to the series circuit of the current paths of the n-channel FETs. The p-channel FETs are formed in at least two n-type well regions, which is formed in the major surface region of a p-type semiconductor substrate at different locations separated from each other by predetermined distances.

REFERENCES:
patent: 4511814 (1985-04-01), Matsuo et al.

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