Transfer gate-less photosensor configuration

Details Transfer gate-less photosensor configuration Transfer gate-less photosensor configuration

1975-02-07

1976-11-30

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 30, 178 71, H01L 2714

Patent

active

039953025

ABSTRACT:
The charge generated in semiconductor material by incident radiation is transferred to an adjacent region of the semiconductor material by lowering the potential on the adjacent region of semiconductor material relative to the potential in the region where the charge was initially generated. Charge is prevented from flowing back to the region where it was generated by means of a potential barrier formed between the generation region and the adjacent region by a region of semiconductor material highly doped relative to the substrate between said adjacent region and the region in which the charge is generated.

REFERENCES:
patent: 3771149 (1973-11-01), Collins et al.
patent: 3865652 (1975-02-01), Agusta et al.
patent: 3898685 (1975-08-01), Engeler et al.
Anantha, IBM Tech. Discl. Bull, vol. 14, No. 4, Sept. 1971, p. 1234.
Tompssett et al. IEEE Trans. on Electron Devices, Nov. 1971, pp. 992-996.

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