Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1997-02-03
2000-03-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257417, 257418, 257420, 7351421, 7351422, 7351423, 7351429, 7351436, 73DIG1, 438 50, 438 52, H01L 2982
Patent
active
060435240
ABSTRACT:
A sensor (100) includes a fixed gate field-effect transistor (138) that produces a quiescent signal (V.sub.QUIESC1) in a channel (336) when a control signal (V.sub.CONTROL) is applied to a source (332) of the FGFET. A movable gate field-effect transistor (MGFET) (108) produces a sense signal (V.sub.ACCEL) in a channel (316) in response to a physical condition of the sensor when the control signal is applied to a source (312) of the MGFET such that the sense signal is proportional to the quiescent signal. The difference between the currents in the FGFET and MGFET is amplified by a differential amplifier (230) to produce the output signal (V.sub.OUT) of the sensor. The difference between a reference signal (V.sub.RATIO) and the quiescent signal is amplified in an amplifier (206) to produce the control signal that adjusts the output signal to be proportional to the reference signal.
REFERENCES:
patent: 5503017 (1996-04-01), Mizukoshi
patent: 5504356 (1996-04-01), Takeuchi et al.
patent: 5541437 (1996-07-01), Watanabe et al.
patent: 5572057 (1996-11-01), Yamamoto et al.
patent: 5578843 (1996-11-01), Garabedian et al.
patent: 5627397 (1997-05-01), Kano et al.
Joseph Eric D.
Kar Barun K.
Dover Rennie William
Mintel William
Motorola Inc.
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