Transconductance power amplifier

Amplifiers – Signal feedback – In cascade amplifiers

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C330S300000, C330S311000, C330S262000, C330S285000, C330S296000

Reexamination Certificate

active

06765438

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to power amplifiers, more particularly to power amplifiers designed to drive capacitive loads, and, even more particularly, to a transconductance power amplifier.
BACKGROUND OF THE INVENTION
Many systems, including spacecraft, require power amplifiers to drive capacitive loads. Power amplifier electronics are commonly required in satellites for various servo control systems such as piezoelectric actuators for imaging applications. The high capacitance associated with piezoelectric actuators poses a challenge to maintaining stability and accuracy with conventional amplifier topologies. In addition, high voltage N-channel devices and low voltage operational amplifiers are more readily available in radiation hardened configurations than P-channel devices and high voltage operational amplifiers, respectively. There is thus a longfelt need for a transconductance power amplifier for capacitive loads that offers improved stability and accuracy.
SUMMARY OF THE INVENTION
The present invention broadly comprises a transconductance power amplifier for amplifying a signal to a capacitive load, including a first N-channel enhancement MOSFET transistor operatively arranged to source current to the capacitive load, wherein the first N-channel MOSFET transistor has a threshold gate to source voltage, a second N-channel enhancement MOSFET transistor operatively arranged to sink current to the capacitive load, an operational amplifier operatively arranged to transmit and amplify an input signal to both of the first and second MOSFET transistors, and, means for biasing the first N-channel enhancement MOSFET transistor such that its gate to source voltage is always at or above its threshold when the load draws near zero current so that very little additional gate charge is required to turn it on more fully. The power amplifier also includes means for reducing current to the first N-channel enhancement MOSFET transistor when the power amplifier sinks current from the load through the second N-channel enhancement MOSFET transistor.
A general object of the present invention is to provide a transconductance power amplifier for high capacitance loads, which amplifier offers improved stability and accuracy versus prior designs.
A secondary object of the present invention is to provide a transconductance power amplifier for capacitive loads having a pair of N-channel MOSFET drive transistors, one of which is biased such that its gate to source voltage is always at or above its threshold when the load draws near zero current so that very little additional gate charge is required to turn it on more fully.
Another object of the present invention is to provide a transconductance power amplifier for capacitive loads having a pair of N-channel MOSFET drive transistors, one of which sources current to the load while the other sinks current from the load, further including means for reducing current to the “sourcing” transistor when the other transistor is sinking current from the load.
A further object of the present invention is to provide a transconductance power amplifier which uses N-channel devices and a low voltage operational amplifier for radiation hardening.
Still a further object of the present invention is to provide a transconductance power amplifier which uses a minimum number (5) of active components.
These and other objects, features and advantages of the present invention will become readily apparent from the following detailed description of the invention in view of the drawing figure and appended claims.


REFERENCES:
patent: 4442409 (1984-04-01), Preslar
patent: 4482868 (1984-11-01), Whatley
patent: 4520323 (1985-05-01), Nakayama
patent: 4558288 (1985-12-01), Nakayama
patent: 4628275 (1986-12-01), Skipper et al.
patent: 5057790 (1991-10-01), Landi
patent: 5361041 (1994-11-01), Lish
patent: 5378938 (1995-01-01), Birdsall et al.
patent: 5621357 (1997-04-01), Botti et al.
patent: 5841321 (1998-11-01), Miyake et al.
patent: 5955923 (1999-09-01), Dijkmans et al.
patent: 6150853 (2000-11-01), Chrappan et al.
patent: 62294306 (1988-03-01), None
Millman “Microelectronics” McGraw-Hill Book Co 1979 pp 670-671.*
Elwan et al. “CMOS low-voltage class-AB operational transconductance amplifier” Electronics Letters, vol. 36 Issue 17 Aug. 17, 2000 pp 1439-1440.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transconductance power amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transconductance power amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transconductance power amplifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3215548

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.