Transconductance device employing native MOS transistors

Details Transconductance device employing native MOS transistors Transconductance device employing native MOS transistors

2006-03-14

2006-03-14

Pascal, Robert (Department: 2817)

Wave transmission lines and networks

Negative resistance or reactance networks of the active type

Simulating specific type of reactance

C333S215000, C331S132000

Reexamination Certificate

active

07012487

ABSTRACT:
A system on chip such as a radio receiver has reduced suceptibility to voltages in the bulk silicon by using gyrator elements in the receiver with each gyrator element including a plurality of current sources interconnected to provide output transconductance voltages, and a variable load for the current sources including first and second load resistors each serially connected with one other plurality of current sources. A variable resistance interconnects nodes of the load resistors with the variable resistance comprising a pair of native MOS transistors having low threshold voltages. In a preferred embodiment the first and second load resistors comprise first and second MOS transistors with the pair of native transistors serially connected between source elements of the first and second MOS transistors.

REFERENCES:
patent: 4442481 (1984-04-01), Brahmbhatt
patent: 4533876 (1985-08-01), Haque et al.
patent: 4710654 (1987-12-01), Saitoh et al.
patent: 4972098 (1990-11-01), Boudewijns
patent: 5117205 (1992-05-01), Nauta
patent: 5210450 (1993-05-01), Parkinson
patent: 5319316 (1994-06-01), Fensch
patent: 5384501 (1995-01-01), Koyama et al.
patent: 5463352 (1995-10-01), Chen
patent: 5963084 (1999-10-01), Eschauzier
patent: 6194972 (2001-02-01), Brown
patent: 6545534 (2003-04-01), Mehr
Schaumann, “Simulating Lossless Ladders with Transconductance-C Circuits,” Mar. 1998, IEEE Transactions on Circuits and Systems-II: Analog and Digital Signal Processing, vol. 45, No. 3.
Johns, David A, and Martin, Ken, “CMOS Transconductors Using Triode Transistors,”Analog Integrated Circuit Design,John Wiley & Sons, Inc., New York, 1997, pp 597-600.
Tsividis, Yannis P., “Model Accuracy and Parameter Extraction,”Operation and Modeling of the MOS Transistor,McGraw-Hill, 1987, pp. 154-160.

Affiliated with

Also associated with

Rating

Transconductance device employing native MOS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transconductance device employing native MOS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transconductance device employing native MOS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3530899