Transconductance amplifier using parasitic bipolar transistors t

Details Transconductance amplifier using parasitic bipolar transistors t Transconductance amplifier using parasitic bipolar transistors t

1991-12-26

1993-02-02

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including differential amplifier

330300, H03F 345, H03F 316

Patent

active

051840871

ABSTRACT:
A transconductance amplifier comprising an active load including current mirrors, an amplifying unit provided with a pair of first and second NMOS transistors and a bias unit provided with a pair of parastic bipolar transistors. The parasitic bipolar transistors may be vertical or horizontal-type bipolar transistors that are present in fabrication of CMOS devices. In accordance with the present invention, the transconductance amplifier is capable of embodying a constant voltage source thereof utilizing the parasitic bipolar transistors which are present in fabrication of CMOS devices thereof. The constant voltage source applies a constant voltage between the gates of the first and second NMOS transitors. Therefore, the number of components constituting the circuit can be reduced with the stability of the circuit being superior to that of the conventional circuit comprising only the MOS transistors.

REFERENCES:
patent: 5089789 (1992-02-01), Van Tran
patent: 5101126 (1992-03-01), Butler et al.

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