Transcallent semiconductor device

Details Transcallent semiconductor device Transcallent semiconductor device

1975-01-09

1976-10-05

James, Andrew J.

Heat exchange

With valve or movable deflector for heat exchange fluid flow

With by-pass of heat exchanger or heat exchanger section

357 81, 357 79, 165 80, 174 52S, H01L 2504, H01L 2302, H01L 2342, H01L 2344

Patent

active

039848612

ABSTRACT:
Metal plates of tungsten or molybdenum, having an optimum thickness of 1000 micrometers or less, are bonded to respective cathode and anode electrical coatings on the opposed major surfaces of a semiconductor wafer. The metal plates in turn are conductively bonded to the heat pipe walls which are used as the electrical connectors between the anode and cathode coatings and the external working circuit. Heat that is developed by the surge current flowing through the wafer during the first 6 milliseconds, is dissipated into the plates that are bonded to the opposed major surfaces of the wafer, before the cooling capability of the heat pipes is effective. This provides a greater surge current capability for the semiconductor wafer.

REFERENCES:
patent: 3739235 (1973-06-01), Kessler
patent: 3826957 (1974-07-01), McLaughlin et al.
patent: 3852804 (1974-12-01), Corman et al.
patent: 3852805 (1974-12-01), Brzozowski

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