Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-07-18
2010-02-09
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C257S774000, C257S775000, C257S789000, C438S612000
Reexamination Certificate
active
07659622
ABSTRACT:
A design methodology reduces electromigration in integrated circuit joints such as flip-chip bumps by seeking to produce a more uniform current distribution at the interface between the integrated circuit pad and the joint while maintaining an interface form that coincides with standard integrated circuit designs is presented. The design methodology addresses the current distribution at the pad by dividing current carrying traces into a plurality of sub-traces with known resistances such that each sub-trace distributes a known amount of current to the pad of the integrated circuit. The multiple sub-traces connect to the pad and are placed to obtain a desired uniformity in the incoming current distribution. Width and/or length adjustments could be made to each of the plurality of sub-traces to obtain the desired resistances.
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Dauksher Walter J.
Eaton Dennis H.
Avago Technologies General IP ( Singapore) Pte. Ltd.
Williams Alexander O
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