Toughened silicon carbide and method for making the same

Plastic and nonmetallic article shaping or treating: processes – Outside of mold sintering or vitrifying of shaped inorganic... – Producing silicon carbide containing product

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C501S154000

Reexamination Certificate

active

08003042

ABSTRACT:
Pressureless sintering of silicon carbide with fracture toughness in excess of about 4 MPa-m1/2as measured by the single-edge precracked beam (SEPB) technique while maintaining a density greater than 3.1 g/cc for compositions with SiC greater than about 94 wt. % is made possible through the use of metallic Al to promote sintering and grain growth. Boron and carbon may be used as traditional sintering aids, with nitrogen to suppress grain growth, and additions of yttrium and/or lanthanide elements to promote intergranular fracture.

REFERENCES:
patent: 4004934 (1977-01-01), Prochazka
patent: 4179299 (1979-12-01), Coppola et al.
patent: 4230497 (1980-10-01), Schwetz et al.
patent: 4354991 (1982-10-01), Suzuki et al.
patent: 4502983 (1985-03-01), Omori et al.
patent: 4564490 (1986-01-01), Omori et al.
patent: 4569921 (1986-02-01), Omori et al.
patent: 4569922 (1986-02-01), Suzuki
patent: 4829027 (1989-05-01), Cutler et al.
patent: 5298470 (1994-03-01), Chia et al.
patent: 5372978 (1994-12-01), Ezis
patent: 5855841 (1999-01-01), Trigg et al.
patent: 5855842 (1999-01-01), Trigg et al.
patent: 6531423 (2003-03-01), Schwetz et al.
patent: 6680267 (2004-01-01), Pujari et al.
patent: 6762140 (2004-07-01), Pujari et al.
Alliegro et al, “Pressure Sintered Silicon Carbide,” J. Am. Ceram. Soc., 39 [11] 386-89 (1956).
Bocker et al, “Sintering of Alpha Silicon Carbide with additions of Aluminum,” Pow. Met., 11 83-85 (1979).
Chia et al, “High-Toughness Silicon Carbide,” Ceram. Eng. Soc. Proc., 12, 1845-61 (1991).
Padture et al, “In Situ-Toughened Silicon Carbide,” J. am. Ceram. Soc., 77[2] 519-23 (1994).
Zhou et al, “Thermal conductivity of silicon carbide densified with rare-earth oxide additives,” J. of the European Ceram. Soc., vol. 24, Issue 2, 8th International Conference on Ceramic Processing, 2004, pp. 265-270, ISSN 0955-2219, DOI: 10.1016/S0955-2219(03)00236-X.
“Standard Test Methods for Detrmination of Fracture toughness of Advanced Ceramics at Ambient Temperature”,Annual Book of Standards, ASTMC, Philadelphia, PA 1999, (1999),641-672.
Flinders, et al., “High Toughness Silicon Carbide as Armor”,J. Am. Ceram.Soc. 88[8] , 2217-2226 (2005), (20005),2217-2226.
Flinders, et al., “Microstructural Engineering of the Si-C-Al-O-N System”,Ceram Trans, 178,63-78 (2005),63-78.
Flinders, et al., “Toughness-hardness Trade Off in Advanced SiC Armor”,Ceram Trans 151, 37-48, (2003),37-48.
Mori, et al., “Synthesis and Magnetic Properties of Binary Boride REB25 Compounds”,J. Phys. Condens. Matter: 13[20],1, 423-430 (2001), 423-430.
Pabit, et al., “Grain Boundary Chemistry of SiC-Based Armor”,Ceram. Eng. Sci. Proc.27[7] , 2006.
Ray, D. , et al., “Effect of Room-Temperature Hardness and Toughness on the Ballistic Performance of SiC-Based Ceramics”,Ceram. Eng. Sci. Proc., 26[7], 131-42 (2005),131-142.
Ray, et al., “Hardness/Toughness Relationship for SiC Armor”,Ceram. Eng. Sci. Proc. 24[3], 401-410, (2003),401-410.
Griffin, International Search Report for PCT/US07/07522 sent Mar. 11, 2008, 1-2.
Griffin, Written Opinion for PCT/US07/07522 sent Mar. 11, 2008,1-6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Toughened silicon carbide and method for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Toughened silicon carbide and method for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Toughened silicon carbide and method for making the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2760172

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.