Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-05-18
2010-11-09
McPherson, John A (Department: 1795)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C430S231000
Reexamination Certificate
active
07829965
ABSTRACT:
A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections.
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Hoague Timothy J.
Leidy Robert K.
Canale Anthony J.
International Business Machines - Corporation
McPherson John A
Scully , Scott, Murphy & Presser, P.C.
Verderame Anna L
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