Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-03-01
2011-03-01
Kelly, Cynthia H (Department: 1722)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C430S321000
Reexamination Certificate
active
07898049
ABSTRACT:
A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections. To improve quality of mircrolens structure uniformity exhibited at all pixel locations including those near a pixel array edge or corner, a top anti-reflective coating layer is applied on top of a photoresist layer prior to the exposure and flowing steps.
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English language Abstract of Japanese Patent No. JP2004070087A, dated Mar. 4, 2004.
“The simulation analysis for photolithography process of microlens array”, dated Dec. 31, 2003.
Dillon John E.
Hoague Timothy J.
Leidy Robert K.
Canale Anthony J.
International Business Machines - Corporation
Kelly Cynthia H
Scully Scott Murphy & Presser, PC
Verderame Anna L
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