Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1977-02-24
1978-08-01
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29577R, 29578, 29580, 29576W, 148187, 156643, 156648, 156654, 156657, 204 15, 204 32S, 2041293, 20412965, 357 40, 357 49, 357 50, H01L 2176, H01L 2704
Patent
active
041040902
ABSTRACT:
A process which utilizes an anodized porous silicon technique to form dielectric isolation on one side of a semiconductor device is described. Regions of silicon semiconductor are fully isolated from one another by this technique. The starting wafer typically is predominantly P with a P+ layer thereon. A P or N layer over the P+ layer is formed thereover such as by epitaxial growth. The surface of the silicon is oxidized and a photoresist layer applied thereto. Openings are formed in the photoresist. Openings are formed in the silicon dioxide using the photoresist as a mask and appropriate etching techniques. The openings in the silicon dioxide define the regions to be etched by reactive ion etching. Reactive ion etching is accomplished at least down to the P+ region. The structure is then subjected to the anodic etching technique which preferentially attacks the P+ layer to form porous silicon throughout the P+ layer. The structure is then placed in a thermal oxidation ambient until the porous silicon layer has been fully oxidized to silicon dioxide. The openings through the surface layer are filled up with oxide to fully isolate the P or N surface layer.
REFERENCES:
patent: 3575740 (1971-04-01), Castrucci et al.
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3966577 (1976-06-01), Hochberg
patent: 3972754 (1976-08-01), Riseman
patent: 3997378 (1976-12-01), Kaji et al.
Badami et al., "Dielectric Isolation of Silicon Devices," I.B.M. Tech. Discl. Bull., vol. 18, No. 1, Jun. 1975, pp. 116-117.
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
Saile George O.
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