Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2011-04-05
2011-04-05
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257SE23110
Reexamination Certificate
active
07919855
ABSTRACT:
A semiconductor device including at least one gate terminal in operational contact with an active layer or top surface of the semiconductor substrate includes a deposited layer of boron phosphide covering the gate terminal and at least a portion of the active layer or the top surface next to and extending from the gate terminal. According to an aspect, the layer of boron phosphide is deposited by a chemical vapor deposition (CVD) process. The boron phosphide layer will have a thickness less than or equal to about 10 microns. The boron phosphide provides a heat spreading coating across the die surface, thus increasing the surface area that conducts the heat from the die. Since the boron phosphide coating is in intimate contact with the gate terminal(s) and the immediately adjacent passivation surfaces of the device, generated heat can rapidly spread away from the active junction or channel. The additional thermal path(s) provided by the boron phosphide coating may terminate away from the active region to further conduct away the heat through thermally unused areas of the device.
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Arena Andrew O
Bond Schoeneck & King , PLLC
Greener William
Gurley Lynne A
Lockheed Martin
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