Topside substrate contact in a trenched semiconductor structure

Details Topside substrate contact in a trenched semiconductor structure Topside substrate contact in a trenched semiconductor structure

1987-02-27

1989-12-12

Wojciechowicz, Edward J.

357 34, 357 49, 357 52, H01L 2704

Patent

active

048871443

ABSTRACT:
A process for forming a topside substrate contact in a trenched semiconductor structure. A trench (24, 26) is etched into a P- block of substrate (10) material. The trench (24, 26) is filled with silicon dioxide, and then the substrate material (10) circumscribed by the trench (24, 26) is removed to form a well. A subcollector (48) is implanted in the well of the P. substrate. Epi material (50) is grown in the well to the top of the silicon dioxide-filled trench. A device (59) is formed in the epi (50). Ohmic contacts (70) are formed on the topside of the substrate to the device (59) within the well, and to the P- substrate itself outside the trench.

REFERENCES:
patent: 4288807 (1981-09-01), Enzlin et al.
patent: 4424621 (1984-01-01), Abbas et al.
patent: 4519128 (1985-05-01), Chesebro et al.

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