Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-05-03
2010-10-12
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C428S220000, C428S105000, C428S405000, C427S385500, C430S270100, C438S690000, C438S700000
Reexamination Certificate
active
07811940
ABSTRACT:
A pattern having exceptionally small features is formed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern comprises features formed by self-organizing material, such as diblock copolymers. The organization of the copolymers is directed by spacers which have been formed by a pitch multiplication process in which spacers are formed at the sides of sacrificial mandrels, which are later removed to leave spaced-apart, free-standing spacers. Diblock copolymers, composed of two immiscible block species, are deposited over and in the space between the spacers. The copolymers are made to self-organize, with each block species aggregating with other block species of the same type.
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Rockford
Angadi Maki A
Deo Duy-Vu N
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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