Topography compensation of imprint lithography patterning

Details Topography compensation of imprint lithography patterning Topography compensation of imprint lithography patterning

2008-05-20

2008-05-20

Chawan, Sheela (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

C430S313000, C438S705000

Reexamination Certificate

active

10874499

ABSTRACT:
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

REFERENCES:
U.S. Appl. No. 10/874,498, filed Jun. 2004, Eash, Brady.

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