Top layers of metal for high performance IC's

Details Top layers of metal for high performance IC's Top layers of metal for high performance IC's

2008-05-13

2008-05-13

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S202000, C257S203000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S211000, C257S759000, C257S760000

Reexamination Certificate

active

07372155

ABSTRACT:
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length-by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

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