Top layers of metal for high performance IC's

Details Top layers of metal for high performance IC's Top layers of metal for high performance IC's

2007-11-13

2007-11-13

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S207000, C257S208000, C257S700000, C257S758000, C257S759000, C257S760000, C257S762000

Reexamination Certificate

active

11230004

ABSTRACT:
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

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Stanley Wolf,Silicon Processing for the VLSI Era vol. 2: Process Integration, Lattice Press, Sunset Beach, CA pp. 214-285, copyright 1990.

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