Top-gate type thin film transistor with dangling bonds of silico

Details Top-gate type thin film transistor with dangling bonds of silico Top-gate type thin film transistor with dangling bonds of silico

1995-11-21

1997-12-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 65, 257297, 257324, 257325, 257333, 257377, H01L 2976, H01L 27108, H01L 2994

Patent

active

056939612

ABSTRACT:
In a top-gate type thin film transistor including a polycrystalline silicon pattern having a channel region, a source region and a drain region on a substrate, a gate electrode via a gate insulating layer on the polycrystalline silicon layer, an insulating layer thereon, and metal electrodes coupled to the source region and the drain region, dangling bonds of silicon of the channel region at an interface with the gate insulating layer and dangling bonds of silicon of a part of the drain region are combined with hydrogen.

REFERENCES:
patent: 5188976 (1993-02-01), Kane et al.
patent: 5250444 (1993-10-01), Khan et al.
patent: 5296729 (1994-03-01), Yamanaka et al.
patent: 5403756 (1995-04-01), Yoshimachi et al.
I-Wei Wu et al., "Effects of Trap-State Density Reduction by Plasma Hydrogenation in Low-Temperature Polysilicon TFI", IEEE Electron Device Letters, vol. 10, No. 3, Mar. 1989, pp 123-125.
"Performance of Polysilicon TFT Digital Circuits Fabricated with Various Processing Techniques and Device Architectures", SID 90 Digest, 1990, pp. 307-310.

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