Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-27
1997-03-25
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 61, 257 66, 257 70, 257 72, H01L 2904
Patent
active
056147295
ABSTRACT:
A transparent insulation film is formed on a glass substrate. Source and drain electrodes are formed on the transparent insulation film with their ends in spaced and opposing relation. The entire face of the substrate is treated with PH.sub.3 plasma to diffuse P atoms to form a doped surface layer. An a-Si semiconductor layer is formed on the doped surface layer so as to span a space between the source and drain electrodes with the opposite end portions of the semiconductor layer overlying those electrodes. A gate insulation film is formed on the semiconductor layer to extend all over the substrate. A gate electrode is formed of metal on the top of the gate insulation film 6 such that the opposite side edges of the gate electrode are recessed inwardly of the edges of the source and drain electrodes. An excimer laser beam is radiated against the face of the substrate with the gate electrode acting as a mask so that the laser-irradiated regions of the semiconductor layer comprise source and drain regions of n.sup.+ poly-Si.
REFERENCES:
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5313077 (1994-05-01), Yamazaki
Nakagawa Takanobu
Sunata Tomihisa
Takeuchi Shu
Ukai Yasuhiro
Guay John
Hosiden Corporation
Jackson, Jr. Jerome
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