Coherent light generators – Particular active media – Semiconductor
Patent
1990-04-13
1992-05-19
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 96, 357 4, 437129, H01S 319
Patent
active
051154420
ABSTRACT:
Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes to confluence within the active gain region to effectively attain lasing threshold. The path is consequence of a buried region of increased resistance which encircles the laser at or above the active region. The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated.
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Lee Yong H.
Tell Benjamin
AT&T Bell Laboratories
Epps Georgia Y.
Indig G. S.
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