Top emission active matrix OLED and fabricating method thereof

Details Top emission active matrix OLED and fabricating method thereof Top emission active matrix OLED and fabricating method thereof

2005-09-13

2005-09-13

Tran, Minhioan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S098000, C257S099000, C257S347000

Reexamination Certificate

active

06943372

ABSTRACT:
A top emission active matrix organic light-emitting display device is provided. The display device has a metallic-shielding layer underneath an anode layer so that light from an organic light-emitting layer is prevented from penetrating into the channel layer of a thin film transistor to induce a photoelectric leakage current. The metallic shielding layer also permits the extension of the anode layer into area above the thin film transistor so that light-emitting area of each pixel structure is increased. High conductivity of the shielding layer is also utilized to boost the electrical conductivity of the anode layer so that the device carries a uniform current resulting in a longer working life.

REFERENCES:
patent: 6117529 (2000-09-01), Leising et al.
patent: 6690434 (2004-02-01), Yamazaki et al.
patent: 2002/0030193 (2002-03-01), Yamazaki et al.
patent: 2003/0116768 (2003-06-01), Ishikawa

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