Top antireflective coating material and its process for DUV and

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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4302701, 430512, G03F 7023, G03C 1825

Patent

active

058798536

ABSTRACT:
This invention relates to a top antireflective layer (TAR) which is preferably transparent to some extent and has high-etch resistance and low reflectivity at the photoresist/TAR interface. The TAR also significantly reduces CD variation in exposed photoresist film. The TAR of the present invention comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer having an orthodiazonaphthoquinone structure. The present invention is also related to a process of forming a semiconductor by applying a photoresist layer to the surface of a substrate, forming a top antireflection layer on the photoresist layer, and selectively exposing the substrate to ultraviolet light, wherein the TAR comprises an indanone or glutarimide copolymer, a solvent, and an additive sensitizer with an orthodiazonaphthoquinone structure.

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