Top and sidewall bridged interconnect structure and method

Details Top and sidewall bridged interconnect structure and method Top and sidewall bridged interconnect structure and method

2008-07-01

2008-07-01

Pham, Thanhha (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S776000, C257SE23170, C257SE23145

Reexamination Certificate

active

10982455

ABSTRACT:
An interconnect structure and its method for fabrication each employ an interconnect formed over and adjacent an active region of a semiconductor substrate. A gate electrode is also formed over the active region. Spacer layers are formed adjoining the interconnect and the gate electrode. A spacer layer adjoining the interconnect is removed and a bridging silicide conductor layer is formed bridging a top surface and a sidewall surface of the interconnect with a surface of the active region.

REFERENCES:
patent: 5536683 (1996-07-01), Lin et al.
patent: 6194313 (2001-02-01), Singh et al.
patent: 6329720 (2001-12-01), Li et al.

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