Electrical resistors – Resistance value responsive to a condition – Magnetic field or compass
Reexamination Certificate
2007-02-27
2007-02-27
Hoang, Tu (Department: 2832)
Electrical resistors
Resistance value responsive to a condition
Magnetic field or compass
C338S03200R
Reexamination Certificate
active
10771959
ABSTRACT:
A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer indicating that the tunneling magnetoresistive stack has a high quality tunnel barrier layer.
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Clifton Peter Hampden
Duxstad Kristin Joy
Karr Brian William
Larson David James
Singleton Eric Walter
Hoang Tu
Kinney & Lange , P.A.
Seagate Technology LLC
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